2SB649A C(100-200)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit -180 V 2SB649 -120 V 2SB649A -160 VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ Symbol Parameter 2. COLLECTOR 3. BASE unless otherwise specified) Test conditions Min IC =-1mA,IE=0 Max Typ Unit -180 V -120 -160 V -5 V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC =0 Collector cut-off current ICBO VCB=-160V,IE=0 -10 µA Emitter cut-off current IEBO VEB=-4V,IC=0 -10 µA hFE(1) DC current gain hFE(2) VCE(sat) Collector-emitter saturation voltage IC=-10mA,IB=0 2SB649 2SB649A VCE=-5V,IC=-150mA 2SB649A VCE=-5V,IC=-500mA VBE VCE=-5V,IC=-150mA Transition frequency fT VCE=-5V,IC=-150mA Cob CLASSIFICATION OF VCB=-10V,IE=0,f=1MHz Range 2SB649 2SB649A www.cj-elec.com 320 200 30 -1 V -1.5 V 140 MHz 27 pF hFE(1) B Rank 60 60 IC=-500mA,IB=-50mA Base-emitter voltage Collector output capacitance 2SB649 C 60-120 100-200 60-120 100-200 1 D 160-320 B,Oct,2014 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 2 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 B,Oct,2014